1 features ? rectangular led rf performance C 450 & 460 nm C 76 mw min ? high reliability - eutectic attach ? low forward voltage (vf) C 3.1 v typical at 50 ma ? maximum dc forward current C 150 ma ? 1000-v esd threshold rating ? ingan junction-down design for improved thermal management ? no wire bonds required applications ? large lcd backlighting C television ? general illumination ? medium lcd backlighting C portable pcs C monitors ? led video displays ? white leds direct attach da3547? leds c xxx da3547-s xxx 00 data sheet crees direct attach da3547 leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary device technology and silicon-carbide substrates to deliver superior value for the tv-backlighting and general-illumination markets. the da3547 leds are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly effcient solution. the bondpad- down design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance from improved thermal management. the design is optimally suited for industry-standard top-view packages. c xxx da3547-s xxx 00 chip diagram d a t a s h e e t : c p r 3 e l r e v . a top view bottom view die cross section anode (+) 296 x 90 m da3547 led 350 x 470 m t = 155 m cathode (-) 296 x 236 m gap 90 m subject to change without notice. www.cree.com
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and da and da3547 are trademarks of cree, inc. 2 cpr3el rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 25c notes 1,3, & 4 c xxx da3547-s xxx 00 dc forward current 150 ma peak forward current (1/10 duty cycle @ 1 khz) 200 ma led junction temperature 150c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 50 ma note 3 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c450da3547-s xxx 00 2.8 3.1 3.4 2 20 c460da3547-s xxx 00 2.8 3.1 3.4 2 21 mechanical specifcations c xxx da3547-s xxx 00 description dimension tolerance p-n junction area (m) 296 x 416 35 chip bottom area (m) 350 x 470 35 chip top area (m) 200 x 320 35 chip thickness (m) 155 15 ausn bond pad width C anode (um) 90 15 ausn bond pad length C anode (um) 296 35 ausn bond pad width C cathode (um) 236 35 ausn bond pad length C cathode (um) 296 35 bond pad gap (m) 90 15 ausn bond pad thickness (m) 3 0.5 notes: 1. maximum ratings are package-dependent. the above ratings were determined using a chip sub-mount on mcpcb (with silicone encapsulation and intrinsic ausn metal die attach) for characterization. ratings for other packages may differ. junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). 2. product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. 3. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 50 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy encapsulant and intrinsic ausn metal die attach). optical characteristics measured in an integrating sphere using illuminance e. 4. the maximum forward current is determined by the thermal resistance between the led junction and ambient. it is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the led junction to ambient in order to optimize product performance. 0 20 40 60 80 100 120 140 160 50 75 100 125 150 175 maximum forward current (ma) ambient temperature ( ? c) rth j - a = 10 ? c/w rth j - a = 20 ? c/w rth j - a = 30 ? c/w rth j - a = 40 ? c/w
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and da and da3547 are trademarks of cree, inc. 3 cpr3el rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx da3547-s xxx 00 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx da3547-s xxxxx ) orders may be flled with any or all bins (c xxx da3547- xxxxx ) contained in the kit. all radiant fux and dominant wavelength values shown and specifed are at if = 50 ma. c450da3547-s07600 c450da3547-0313 c450da3547-0314 c450da3547-0315 c450da3547-0316 c450da3547-0309 c450da3547-0310 c450da3547-0311 c450da3547-0312 c450da3547-0305 c450da3547-0306 c450da3547-0307 c450da3547-0308 447.5 450 452.5 445 455 88 82 76 radiant flux (mw) dominant wavelength (nm) c460da3547-s07600 c460da3547-0313 c460da3547-0314 c460da3547-0315 c460da3547-0316 c460da3547-0309 c460da3547-0310 c460da3547-0311 c460da3547-0312 c460da3547-0305 C460DA3547-0306 c460da3547-0307 c460da3547-0308 dominant wavelength (nm) 457.5 460 462.5 455 465 radiant flux (mw) 88 82 76
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and da and da3547 are trademarks of cree, inc. 4 cpr3el rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the da led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 50% 100% 150% 200% 250% 300% 0 50 100 150 relative light intensity if (ma) relative intensity vs. forward current - 2 - 1 0 1 2 0 50 100 150 dominant wavelength shift (nm) if (ma) wavelength shift vs. forward current 0% 50% 100% 150% 200% 250% 300% 0 50 100 150 relative light intensity if (ma) relative intensity vs. forward current - 2 - 1 0 1 2 0 50 100 150 dominant wavelength shift (nm) if (ma) wavelength shift vs. forward current 0 50 100 150 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage 0 20 40 60 80 100 350 400 450 500 550 600 relative intensity wavelength (nm) relative intensity vs. wavelength 0 50 100 150 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage 0 20 40 60 80 100 350 400 450 500 550 600 relative intensity wavelength (nm) relative intensity vs. wavelength
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and da and da3547 are trademarks of cree, inc. 5 cpr3el rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com radiation pattern this is a representative radiation pattern for the da led product. actual patterns will vary slightly for each chip.
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